教育及工作经历

2016.09-2022.01：工学博士，清华大学

2022.02-2024.03：助理研究员，之江实验室

2024.04至今：助理教授，深圳技术大学

研究领域

硅基异质集成有源光电子器件、硅基片上光学传感器件等

代表性文章

[1] Zhen Wang, Hao Sun, Qiyao Zhang, Jianxing Zhang, Jialu Xu, Jiacheng Tang, and Cun-Zheng Ning*. Threshold-like superlinear sccumulation of excitons in a gated monolayer transition metal dichalcogenide. ACS Photonics, 2023, 10, 412-420.

[2] Zhen Wang, Jin Zhang, Lei Zhang, Xiaoke Ruan, Weijie Tang, and Tao Chu*. CMOS-compatible ultralow-loss three-step silicon edge coupler with substrate substitution in the whole communication band. micromachines, 2023, 14(1), 66.

[3] Zhen Wang, Hao Sun, Qiyao Zhang, Jianxing Zhang, Jialu Xu, Jiacheng Tang, and Cun-Zheng Ning*. Super-linear behavior of exciton emission in electrically-gated two-dimensional material. CLEO, 2021, FW2Q. 3.

[4] Zhen Wang, Hao Sun, Qiyao Zhang, Jiabin Feng, Jianxing Zhang, Yongzhuo Li, and Cun-Zheng Ning*. Excitonic complexes and optical gain in two-dimensional molybdenum ditelluride well below the Mott transition. Light: Science & Applications, 2020, 9(1), 1-10.

[5] Zhen Wang, Hao Sun, Qiyao Zhang, Jiabin Feng, Jianxing Zhang, Yongzhuo Li, and Cun-Zheng Ning*. Observation of trionic optical gain in electrically gated two-dimensional molybdenum ditelluride. CLEO, 2019, FM4D. 4.

[6] Yongzhuo Li, Jianxing Zhang, Dandan Huang, Hao Sun, Fan Fan, Jiabin Feng, Zhen Wang, and Cun-Zheng Ning*. Room-temperature continuous-wave lasing from monolayer molybdenum ditelluride integrated with a silicon nanobeam cavity. Nature Nanotechnology, 2017, 12(10), 987-992.

专利

[1] 王震、储涛，一种端面耦合器中反向锥形波导线型的设计方法及装置，中国发明专利， ZL202210823414.9

[2] 王震、张磊、张瑾、储涛，端面耦合器、光电子芯片和端面耦合器的制作方法，中国发明专利，ZL2022114498170.8

[3] 王震、唐伟杰、张瑾、储涛，一种硅基光电子芯片及电子设备，中国发明专利，ZL202310017831.9

[4] 王震、唐伟杰、张瑾、储涛，一种用于大规模硅基光子芯片设计的写场拼接结构与工艺，中国发明专利，ZL202211478745.X

获奖荣誉

1. 2018/03，2017年度中国光学十大进展，排名第七

2. 2021/02，2020年度中国半导体十大研究进展入围奖，排名第一

3. 2022/01，北京市优秀博士毕业生